MACOM Introduces New GaN-on-Silicon Carbide (SiC) Power Amplifier Product Line
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MACOM announces the introduction of its new Gallium Nitride on Silicon Carbide (GaN-on-SiC) power amplifier product line, which it is branding MACOM PURE CARBIDE™. (Graphic: Business Wire)
“This new product line significantly enhances the capability of our existing
- The MAPC-A1000 is a high power GaN-on-SiC amplifier designed to operate between 30 MHz and 2.7 GHz and is housed in a surface mount plastic package. The easy-to-use general purpose amplifier integrates an input match which simplifies the customer’s design-in effort. The amplifier can deliver more than 25 W (44dBm) at greater than 50% efficiency from 500 MHz to 2.7 GHz when tested in a circuit designed for operation over 2.2 GHz simultaneous bandwidth.
- The MAPC-A1100 is a high power GaN-on-SiC amplifier designed to operate up to 3.5 GHz. The device is capable of supporting both CW and pulsed operations with output power levels of at least 65 W (48.1dBm) in an air cavity ceramic package.
The two new general purpose amplifier products are ideal for use in avionics, high power mobile radios, wireless systems and test instrumentation.
MACOM designs and manufactures semiconductor products for Data Center, Telecommunication and Industrial and Defense applications. Headquartered in
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