MACOM Extends Industry Leading GaN Portfolio with New 15 W GaN on SiC Pulsed Power Transistor
Unmatched Transistor Delivers 63% Drain Efficiency with 50 V Operation over DC-3.5 GHz
The devices provide a typical 17 W of peak output power with 15.5 dB of power gain and 63% efficiency. This high performance transistor is assembled using state of the art wafer fabrication processes and provide high gain, efficiency, bandwidth, and ruggedness over multiple octave bandwidths for today's demanding application needs. (Photo: Business Wire)
The MAGX-000035-015000 and MAGX-000035-01500S are gold-metalized unmatched GaN on Silicon Carbide RF power transistors optimized for a variety of RF power amplifier applications. The devices provide a typical 17 W of peak output power with 15.5 dB of power gain and 63% efficiency. These high performance transistors are assembled using state of the art wafer fabrication processes and provide high gain, efficiency, bandwidth, and ruggedness over multiple octave bandwidths for today's demanding application needs.
"The new 15 W peak GaN power transistor offers a versatile and high
performance solution for pulsed driver and power applications over a
broad frequency range," said
Operating between the DC-3.5 GHz frequency range, the devices are highly robust transistors with high voltage breakdowns and boast a mean time to failure (MTTF) of 600 years. The product is offered in both an enhanced flanged (Cu/W) and flangeless (Cu) ceramic package which provide excellent thermal performance.
The table below outlines typical performance for the 1.2-1.4 GHz frequency band.
Parameters | Units | |||||||||||||
Frequency | GHz | DC-3.5 | ||||||||||||
Pout |
W | 17.7 | ||||||||||||
Power Gain | dB | 15.5 | ||||||||||||
Drain Efficiency | % | 63 | ||||||||||||
Droop | dB | 0.1 | ||||||||||||
Load Mismatch Stability | VSWR-S | 5:1 | ||||||||||||
Load Mismatch Tolerance | VSWR-T | 10:1 |
Samples of MAGX-000035-015000 and MAGX-000035-01500S are available from stock. Final datasheets and additional product information can be obtained from the MACOM website at: www.macom.com.
Come visit us and ask us about our GaN portfolio at Booth #131 at
European Microwave Week (EuMW) 2014,
ABOUT MACOM:
Headquartered in
MACOM, M/
For more information about MACOM, please visit www.macom.com follow @MACOMtweets on Twitter; join MACOM on LinkedIn, or visit the MACOM YouTube Channel.
FOR SALES INFORMATION, PLEASE CONTACT:
Photos/Multimedia Gallery Available: http://www.businesswire.com/multimedia/home/20140825005018/en/
MEDIA CONTACTS:
Husrav
Billimoria, 978-656-2896
Husrav.Billimoria@macom.com
or
jglockner@rainierco.com
or
embedded
PR
gk@embedded-pr.de
Source:
News Provided by Acquire Media