MACOM to Demonstrate Cutting-Edge Gen4 GaN Portfolio and Other Innovative Products at IMS 2016 in San Francisco
This Smart News Release features multimedia. View the full release here: http://www.businesswire.com/news/home/20160509005819/en/
MACOM will showcase its industry leading GaN on Silicon portfolio and other high-performance products at IMS 2016 in
Visit Booth #939 to meet with MACOM experts and learn more about:
- Basestation: Cutting-edge MACOM GaN 60 W average Power Doherty module live demo with Xilinx DPD
- RF Energy: Groundbreaking MACOM GaN that will disruptive RF energy applications
- E-Band wideband millimeter-wave Solutions: MACOM's new E-Band TX and RX SMD Modules and portfolio of wideband millimeter-wave products for addressing the emerging 5G access and backhaul markets
- PIN Diode 120 W SMT T/R Switch: A high power, broadband transmit-receive switch demonstrating low TX IL, low RX IL, high RX isolation, small physical size, plastic SMT package across DC - 1 GHz for MILCOM and Land Mobile applications
-
W-Band Power Amplifier MMIC: Power amplifier
MMIC covering 80-100 GHz with leading gain and power performance - Latest Hi-reliability and component products for mission critical space and aerospace applications
Members of MACOM's product management, engineering and applications teams will be available at Booth #939 to answer any inquiries or questions. MACOM experts will also be participating in various sessions throughout IMS, including:
-
Workshop
Code:WME-4
Session: Large Signal Network Analysis: From Instrumentation Architectures to Software
Applications for Your RF Design Flow Improvement
Title: Use of Nonlinear Vector Network Analyzer Measurements in the Development
of GaN on Silicon for BTS Applications
Date:Monday, May 23, 2016
Time: 8:00 -17:00 PT
Location: TBD
Code:WMH-2
Session:E-Band Communications : Market, Technology and IC Design
Title: Transceivers for Highly Spectral Efficient Multi-Gbps radio links
Date:Monday, May 23, 2016
Time:9:00 AM PT
Location: TBD
-
Technical Session
Session: WE1B-3
Title:Soldered Hot-via E-band and W-Band Power Amplifier MMICs for Millimeter-wave ChipScale Packaging
Date:Wednesday, May 25, 2016
Time:8:40 AM -9:00 AM PT
Location:Room 304
-
Microapps
Title: GaN on Silicon Power Amplifier Bias and Decoupling Techniques
Date:Wednesday, May 25, 2016
Time:2:30 PM PT
Location: Microapps pavilion show floor
Title: GaN on Si Thermal Behavior and Its Impact on PA Performance, Reliability and Cost
Date:Thursday, May 26, 2016
Time:10:35 AM PT
Location: Microapps pavilion show floor
Show Information:
Exhibition Hall:
For more information about IMS2016: IMS 2016 Website.
ABOUT MACOM:
Headquartered in
MACOM, M/
For more information about MACOM, please visit www.macom.com
follow @MACOMtweets on
Twitter, join MACOM on LinkedIn,
or visit the MACOM
View source version on businesswire.com: http://www.businesswire.com/news/home/20160509005819/en/
ozzie.billimoria@macom.com
or
cboroski@rainierco.com
or
embedded
PR
Anja-Maria Hastenrath, +49 (0)89 64913634-11
ah@embedded-pr.de
Source:
News Provided by Acquire Media