MACOM Announces Industry's Highest Power GaN L-Band Radar Transistor
650 W Peak Power GaN on
The MAGX-001214-650L00 is a gold-metalized pre-matched GaN on Silicon Carbide transistor that offers the highest peak power in the industry for a single-ended power transistor optimized for pulsed L-Band radar applications. The MAGX-001214-650L00 guarantees 650 W of peak power with a typical 19.5 dB of gain and 60% efficiency. The device also boasts very high breakdown voltages which allow customers reliable and stable operation at 50 V under more extreme load mismatch conditions. The device is assembled in a high performance ceramic flange package and has undergone MACOM's rigorous qualification and reliability testing, which offers customers state of the art power with rugged performance that is ideally suited to today's demanding radar applications.
"The MAGX-001214-650L00 is a clear leader in high pulsed power GaN
technology with guaranteed 650 W of peak output power combined with
excellent gain, efficiency and reliable performance," said
Operating between the 1200 MHz - 1400 MHz Frequency range, the MAGX-001214-650L00 is a highly robust transistor, boasting a mean time to failure (MTTF) of 5.3*106 hours.
The table below outlines typical performance:
Units | MAGX-001214-650L00 | |||||
Frequency | MHz | 1200-1400 | ||||
Pout (min) | W | 650 | ||||
Gain | dB | 19.5 | ||||
Efficiency | % | 60 | ||||
Pulse | µs | 300 | ||||
Duty | % | 10 | ||||
Pulse Droop | dB | 0.3 |
Samples of MAGX-001214-650L00
are available from stock. Final datasheets and additional product
information can be obtained from the M/
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